发明Low defect density silicon and a process for producing low defect density silicon wherein V/G0 is controlled by controlling heat transfer at the melt/solid interface

pdf 收藏

著录项目

申请号 US20010833777 申请日 2001年04月12日 最早公开日 2001年09月13日 所属国家/地区 美国
公开号及公开日 US2001020437A1   2001年09月13日
US6409827B2   2002年06月25日
授权日 2002年06月25日 说明书附图
申请人 FALSTER ROBERT J. (英国)  
HOLZER JOSEPH C. (美国)  
发明人 FALSTER ROBERT J   HOLZER JOSEPH C  
优先权 US19970041845P   19970409US19980057907   19980409US20010833777   20010412
专利分类号 C30B29/06   C30B15/00   C30B15/14   C30B15/20   C30B15/22   C30B21/06   C30B27/02   C30B28/10   C30B30/04   C30B33/00   H01L21/322   H01L21/324  
代理机构 Senniger, Powers, Leavitt & Roedel   代理人

名称及摘要

Low defect density silicon and a process for producing low defect density silicon wherein V/G0 is controlled by controlling heat transfer at the melt/solid interface
The present invention relates to single crystal silicon, in ingot or wafer form, which contains an axially symmetric region which is free of agglomerated intrinsic point defects, and a process for the preparation thereof. The process including controlling growth conditions, such as growth velocity, v, instantaneous axial temperature gradient, G0, and the cooling rate, within a range of temperatures at which silicon self-interstitials are mobile, in order to prevent the formation of these agglomerated defects. The control of G0 is accomplished by controlling heat transfer at the melt/solid interface.
Low defect density silicon and a process for producing low defect density silicon wherein V/G0 is controlled by controlling heat transfer at the melt/solid interface
The present invention relates to single crystal silicon, in ingot or wafer form, which contains an axially symmetric region which is free of agglomerated intrinsic point defects, and a process for the preparation thereof. The process including controlling growth conditions, such as growth velocity, v, instantaneous axial temperature gradient, G0, and the cooling rate, within a range of temperatures at which silicon self-interstitials are mobile, in order to prevent the formation of these agglomerated defects. The control of G0 is accomplished by controlling heat transfer at the melt/solid interface.

同族及引用

同族专利 (65) 引用其他专利(23) 被其他专利引用(44)

EP1118697A2 Low defect density, vacancy dominated silicon
EP0973963A1 LOW DEFECT DENSITY SILICON
EP0973964A1 LOW DEFECT DENSITY, SELF-INTERSTITIAL DOMINATED SILICON
EP1273684A2 Low defect density, vacancy dominated silicon
EP1209259A2 Low defect density, self-interstitial dominated silicon
EP1209258A2 Low defect density silicon
EP0972094A1 LOW DEFECT DENSITY, VACANCY DOMINATED SILICON
DE69806137D1 【Title of corresponding document:CN101070621A】 Low defect density, self-interstitial dominated silicon
DE69806137T2 【Title of corresponding document:CN101070621A】 Low defect density, self-interstitial dominated silicon
DE69807676D1 【Title of corresponding document:CN101070621A】 Low defect density, self-interstitial dominated silicon
DE69807676T2 【Title of corresponding document:CN101070621A】 Low defect density, self-interstitial dominated silicon
DE69813041D1 【Title of corresponding document:CN101070621A】 Low defect density, self-interstitial dominated silicon
DE69813041T2 【Title of corresponding document:CN101070621A】 Low defect density, self-interstitial dominated silicon
DE69824647D1 【Title of corresponding document:CN101070621A】 Low defect density, self-interstitial dominated silicon
DE69824647T2 【Title of corresponding document:CN101070621A】 Low defect density, self-interstitial dominated silicon
DE69840690D1 【Title of corresponding document:CN101070621A】 Low defect density, self-interstitial dominated silicon
JP2000513696A 【Title of corresponding document:CN101070621A】 Low defect density, self-interstitial dominated silicon
JP2001518874A 【Title of corresponding document:CN101070621A】 Low defect density, self-interstitial dominated silicon
JP2001500468A 【Title of corresponding document:CN101070621A】 Low defect density, self-interstitial dominated silicon
MY132874A LOW DEFECT DENSITY, VACANCY DOMINATED SILICON
MY120036A LOW DEFECT DENSITY, SELF- INTERSTITIAL DOMINATED SILICON.
MY120441A LOW DEFECT DENSITY SILICON
MY127594A LOW DEFECT DENSITY, VACANCY DOMINATED SILICON
MY127584A LOW DEFECT DENSITY SELF-INTERSTITIAL DOMINATED SILICON
DE69801903D1 【Title of corresponding document:CN101070621A】 Low defect density, self-interstitial dominated silicon
DE69801903T2 【Title of corresponding document:CN101070621A】 Low defect density, self-interstitial dominated silicon
DE69831618D1 【Title of corresponding document:CN101070621A】 Low defect density, self-interstitial dominated silicon
DE69831618T2 【Title of corresponding document:CN101070621A】 Low defect density, self-interstitial dominated silicon
CN1936113A 缺陷密度低,空位占优势的硅
CN101070621A 低缺陷密度、理想氧沉淀的硅
CN1854353A 低缺陷密度、自间隙原子为主的硅
CN1257556A 低缺陷密度、自间隙原子受控制的硅
CN1936112A 低缺陷浓度的硅
CN1261928A 低缺陷浓度的硅
CN1255169A 缺陷密度低,空位占优势的硅
KR20040065306A 【Title of corresponding document:ep1118697A2】
SG105509A1 LOW DEFECT DENSITY, SELF-INTERSTITIAL DOMINATED SILICON
SG105510A1 LOW DEFECT DENSITY SILICON
SG165151A1 LOW DEFECT DENSITY SILICON
WO9845510A1 LOW DEFECT DENSITY, SELF-INTERSTITIAL DOMINATED SILICON
WO9845508A1 LOW DEFECT DENSITY, VACANCY DOMINATED SILICON
WO9845509A1 LOW DEFECT DENSITY SILICON
TWI257962B 单晶矽晶圆及单晶矽块
US6287380B1 Low defect density silicon
US6254672B1 Low defect density self-interstitial dominated silicon
US5919302A Low defect density vacancy dominated silicon
KR20010006182A LOW DEFECT DENSITY VACANCY DOMINATED SILICON
KR20010006227A low defect density self-interstitial dominated silicon
KR20010006229A LOW DEFECT DENSITY SILICON
US2002007779A1 Method for revealing agglomerated intrinsic point defects in semiconductor crystals
US2001025597A1 Process for producing low defect density, self-interstitital dominated silicon wherein V/Go is controlled by controlling heat transfer at the Melt/Solid interface
US2001020437A1 Low defect density silicon and a process for producing low defect density silicon wherein V/G0 is controlled by controlling heat transfer at the melt/solid interface
US2002139294A1 Low defect density regions of self-interstitial dominated silicon
US2002170485A1 Low defect density epitaxial wafer and a process for the preparation thereof
JP2003192492A VACANCY DOMINATED SILICON HAVING LOW DEFECT DENSITY
JP2003192493A SELF-INTERSTITIAL DOMINATED SILICON HAVING LOW DEFECT DENSITY
JP2003192490A LOW DEFECT DENSITY SILICON
US2004070012A1 Low defect density silicon
US2004089224A1 Process for producing low defect density silicon
JP2004155655A LOW DEFECT DENSITY VACANCY-DOMINATED SILICON WAFER AND INGOT
KR20050049561A LOW DEFECT DENSITY SILICON WAFER AND INGOT
US2005205000A1 Low defect density silicon
JP2006056779A LOW DEFECT DENSITY SILICON
JP2006062960A VACANCY-DOMINATED SILICON WAFER AND INGOT HAVING LOW DEFECT DENSITY
KR20060002028A LOW DEFECT DENSITY, VACANCY DOMINATED SILICON
Vacancy dominated,defect-free silicon
Thermal annealing process for producing low defect density single crystal silicon
Low defect density regions of self-interstitial dominated silicon
Silicon on insulator structure having an epitaxial layer and intrinsic gettering
Vacancy, dominated, defect-free silicon
Process for producing low defect density, ideal oxygen precipitating silicon
Low defect density silicon
Process for producing low defect density silicon
Silicon wafer and manufacturing method thereof
Process for implementing oxygen into a silicon wafer having a region which is free of agglomerated intrinsic point defects
High quality single crystal growing method
HIGH QUALITY SILICON SINGLE CRYSTAL INGOT AND HIGH QUALITY SILICON WAFER MANUFACTURED FROM THE SAME
SILICON SINGLE CRYSTAL INGOT AND SILICON WAFER MANUFACTURED THEREFROM
Low defect density, ideal oxygen precipitating silicon
Vacancy-dominated, defect-free silicon
Low defect density silicon
Process for producing silicon on insulator structure having intrinsic gettering by ion implantation
Controlling agglomerated point defect and oxygen cluster formation induced by the lateral surface of a silicon single crystal during CZ growth
Silicon material with controlled agglomerated point defects and oxygen clusters induced by the lateral surface
Process for forming low defect density, ideal oxygen precipitating silicon
Method and apparatus of growing silicon single crystal and silicon wafer fabricated thereby
SILICON ON INSULATOR STRUCTURE WITH A SINGLE CRYSTAL CZ SILICON DEVICE LAYER HAVING A REGION WHICH IS FREE OF AGGLOMERATED INTRINSIC POINT DEFECTS
METHOD FOR MANUFACTURING A SILICON CYLINDER BY GROWTH ON SEEDS IN A DIRECTED SOLIDIFICATION FURNACE
Method of forming nondefective zone in silicon single crystal wafer by two stage-heat treatment
A process for fabricating a semiconductor material and an apparatus therefor
HIGH-OXYGEN-CONTENT SILICON MONOCRYSTAL SUBSTRATE FOR SEMICONDUCTOR DEVICES AND PRODUCTION METHOD THEREFOR
PRODUCTION OF SI SINGLE CRYSTAL
Method and apparatus for growing silicon crystals
TECHNIQUE AND DEVICE FOR BREEDING OF SILICON CRYSTALS
DEVICE FOR PRODUCING COMPOUND SEMICONDUCTOR SINGLE CRYSTAL AND PRODUCTION
Heat treatment of Si single crystal
Method and apparatus for producing silicon single crystal
Apparatus for growing silicon crystals
Process for producing a semiconductor wafer
Method for heat treating a semiconductor substrate to reduce defects
Treating semiconductor substrate in gas atmos. - to suppress formation of bulk micro defects
Czochralski silicon single crystal drawing where limiting drawing speed is increased to increase efficiency
Oxygen precipitation control in czochralski-grown silicon cyrstals
Method of predicting crystal quality of semiconductor single crystal and apparatus thereof
Method for pulling a silicon single crystal
METHOD FOR GROWING SINGLE CRYSTAL SILICON
SILICON SINGLE CRYSTAL WAFER AND ITS PRODUCTION
Method for the preparation of a single crystal of silicon with decreased crystal defects
Method for the preparation of a single crystal of silicon with decreased crystal defects
SILICON SINGLE CRYSTAL HAVING NO CRYSTAL DEFECT IN CIRCUMFERENCE OF WATER AND ITS PRODUCTION
Silicon single crystal with low defect density and method of producing same
Apparatus and method for the uniform distribution of crystal defects upon a silicon single crystal
SILICON SINGLE CRYSTAL WITH NO CRYSTAL DEFECT IN PERIPHERAL PART OF WAFER AND PROCESS FOR PRODUCING THE SAME
Apparatus for pulling single crystals
Process for producing silicon semiconductor wafers with low defect density
PRODUCTION OF SILICON SINGLE CRYSTAL WAFER
Method of fabricating silicon single crystals
Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnace
Manufacturing method for a silicon single crystal wafer
PRODUCTION OF SILICON SINGLE CRYSTAL HAVING LOW CRYSTAL DEFECT AND SILICON SINGLE CRYSTAL WAFER PRODUCED THEREWITH
SILICON SINGLE CRYSTAL AND ITS PRODUCTION
PRODUCTION OF SILICON SINGLE CRYSTAL AND SILICON SINGLE CRYSTAL WAFER
PRODUCTION OF SILICON SINGLE CRYSTAL AND SILICON SINGLE CRYSTAL WAFER
Single crystal silicon rod growth process
Device and method for pulling a single crystal
Low defect density vacancy dominated silicon
LOW DEFECT DENSITY, IDEAL OXYGEN PRECIPITATING SILICON
LOW DEFECT DENSITY, VACANCY DOMINATED SILICON
LOW DEFECT DENSITY SILICON
LOW DEFECT DENSITY, SELF-INTERSTITIAL DOMINATED SILICON
Method and apparatus for manufacturing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers manufactured by the same
Nitrogen doped single crystal silicon wafer with few defects and method for its production

法律状态历史( 到官方网站查询 )

2001年04月12日 us_iexx (更多信息: Initial Exam Team nn , IEXX)
2001年04月26日 us_scan (更多信息: IFW Scan & PACR Auto Security Review , SCAN)
2001年06月04日 us_c.ad (更多信息: Correspondence Address Change , C.AD)
2001年06月05日 us_oipe (更多信息: Application Dispatched from OIPE , OIPE)
2001年06月15日 us_a.pe (更多信息: Preliminary Amendment , A.PE)
2001年06月15日 us_dock (更多信息: Case Docketed to Examiner in GAU , DOCK)
2001年07月11日 us_wids (更多信息: Information Disclosure Statement (IDS) Filed , WIDS)
2001年07月11日 us_m844 (更多信息: Information Disclosure Statement (IDS) Filed , M844)
2001年08月13日 us_ctnf (更多信息: Non-Final Rejection , CTNF)
2001年08月14日 us_mctnf (更多信息: Mail Non-Final Rejection , MCTNF)
2001年10月16日 us_wids (更多信息: Information Disclosure Statement (IDS) Filed , WIDS)
2001年10月16日 us_dist (更多信息: Terminal Disclaimer Filed , DIST)
2001年10月16日 us_a... (更多信息: Response after Non-Final Action , A...)
2001年10月16日 us_m844 (更多信息: Information Disclosure Statement (IDS) Filed , M844)
2001年10月25日 us_fwdx (更多信息: Date Forwarded to Examiner , FWDX)
2001年10月29日 us_disq (更多信息: Terminal Disclaimer Approved in TC , DISQ)
2001年11月21日 us_as 转让(新专利权人: MEMC ELECTRONIC MATERIALS,INC.,MISSOURI
更多信息: TERMINATION OF SECURITY INTEREST;ASSIGNOR:E.ON AG;REEL/FRAME:012263/0944
生效日期: 20011113)
2001年11月21日 us_as 转让(新专利权人: CITICORP USA,INC.,DELAWARE
更多信息: SECURITY INTEREST;ASSIGNORS:MEMC PASADENA,INC.;PLASMASIL,L.L.C.;SIBOND,L.L.C.;AND OTHERS;REEL/FRAME:012273/0145
生效日期: 20011113)
2001年11月21日 us_as 转让(新专利权人: CITICORP USA,INC.,DELAWARE
更多信息: SECURITY AGREEMENT;ASSIGNORS:MEMC PASADENA,INC.;PLASMASIL,L.L.C.;SIBOND,L.L.C.;AND OTHERS;REEL/FRAME:012280/0161
生效日期: 20011113)
2001年12月27日 us_as 转让(新专利权人: E. ON AG,GERMANY
更多信息: SECURITY INTEREST;ASSIGNOR:MEMC ELECTRONIC MATERIALS,INC.;REEL/FRAME:012407/0806
生效日期: 20011025)
2001年12月28日 us_as 转让(新专利权人: CITICORP USA,INC.,DELAWARE
更多信息: SECURITY AGREEMENT;ASSIGNORS:MEMC PASADENA,INC.;PLASMASIL,L.L.C.;SIBOND,L.L.C.;AND OTHERS;REEL/FRAME:012365/0345
生效日期: 20011221)
2001年12月30日 us_n/dr (更多信息: Formal Drawings Required , N/DR)
2001年12月30日 us_n/=. (更多信息: Notice of Allowance Data Verification Completed , N/=.)
2001年12月30日 us_dock (更多信息: Case Docketed to Examiner in GAU , DOCK)
2001年12月31日 us_mn/=. (更多信息: Mail Notice of Allowance , MN/=.)
2001年12月31日 us_mn/dr (更多信息: Mail Formal Drawings Required , MN/DR)
2002年01月03日 us_d1220 (更多信息: Dispatch to Publications , D1220)
2002年01月04日 us_sent (更多信息: Workflow - File Sent to Contractor , SENT)
2002年01月04日 us_r1021 (更多信息: Receipt into Pubs , R1021)
2002年03月22日 us_n084 (更多信息: Issue Fee Payment Verified , N084)
2002年03月22日 us_drwf (更多信息: Workflow - Drawings Finished , DRWF)
2002年03月22日 us_drwm (更多信息: Workflow - Drawings Matched with File at Contractor , DRWM)
2002年03月22日 us_ltdr (更多信息: Incoming Letter Pertaining to the Drawings , LTDR)
2002年03月22日 us_drwi (更多信息: Workflow - Drawings Received at Contractor , DRWI)
2002年03月22日 us_drwr (更多信息: Workflow - Drawings Sent to Contractor , DRWR)
2002年03月22日 us_r85b (更多信息: Workflow -Received 85b - Unmatched , R85B)
2002年03月22日 us_ifee (更多信息: Issue Fee Payment Received , IFEE)
2002年03月27日 us_r1021 (更多信息: Receipt into Pubs , R1021)
2002年05月15日 us_pils (更多信息: Application Is Considered Ready for Issue , PILS)
2002年05月15日 us_r1021 (更多信息: Receipt into Pubs , R1021)
2002年05月17日 us_r1021 (更多信息: Receipt into Pubs , R1021)
2002年06月06日 us_wpir (更多信息: Issue Notification Mailed , WPIR)
2002年06月25日 us_pgm/ (更多信息: Recordation of Patent Grant Mailed , PGM/)
2002年06月25日 us_ptac (更多信息: Patent Issue Date Used in PTA Calculation , PTAC)
2002年09月10日 us_n423 (更多信息: Post Issue Communication - Certificate of Correction , N423)
2002年10月08日 us_cc 更正的证书()
2003年03月19日 us_as 转让(新专利权人: CITICORP USA,INC.,DELAWARE
更多信息: SECURITY AGREEMENT;ASSIGNORS:MEMC ELECTRONIC MATERIALS,INC.;MEMC PASADENA,INC.;PLASMASIL,L.L.C.;AND OTHERS;REEL/FRAME:013964/0378;SIGNING DATES FROM 20020303 TO 20030303)
2005年08月11日 us_as 转让(新专利权人: MEMC ELECTRONIC MATERIALS,INC.,MISSOURI
更多信息: RELEASE OF SECURITY INTEREST;ASSIGNOR:CITICORP USA,INC.;REEL/FRAME:016641/0045
生效日期: 20050602)
2006年01月11日 us_remi 邮寄的维持费提醒单()
2006年01月19日 us_fpay 缴费(付费年限: 4)
2006年01月19日 us_sulp 逾期付款的附加费()
2008年06月06日 us_pa.. (更多信息: Change in Power of Attorney (May Include Associate POA) , PA..)
2008年06月06日 us_c.ad (更多信息: Correspondence Address Change , C.AD)
2009年09月23日 us_fpay 缴费(付费年限: 8)
2011年04月01日 us_as 转让(新专利权人: BANK OF AMERICA,N.A.,MASSACHUSETTS
更多信息: SECURITY AGREEMENT;ASSIGNORS:MEMC ELECTRONIC MATERIALS,INC.;SUNEDISON LLC;SOLAICX;REEL/FRAME:026064/0720
生效日期: 20110317)
2012年10月01日 us_as 转让(新专利权人: GOLDMAN SACHS BANK USA,NEW JERSEY
更多信息: SECURITY AGREEMENT;ASSIGNORS:NVT,LLC;SUN EDISON LLC;SOLAICX,INC.;AND OTHERS;REEL/FRAME:029057/0810
生效日期: 20120928)
2013年12月09日 us_fpay 缴费(付费年限: 12)
2013年12月26日 us_as 转让(新专利权人: ENFLEX CORPORATION,CALIFORNIA
更多信息: RELEASE BY SECURED PARTY;ASSIGNOR:BANK OF AMERICA,N.A.;REEL/FRAME:031870/0031
生效日期: 20131220)
2013年12月26日 us_as 转让(新专利权人: NVT,LLC,CALIFORNIA
更多信息: RELEASE BY SECURED PARTY;ASSIGNOR:GOLDMAN SACHS BANK USA;REEL/FRAME:031870/0092
生效日期: 20131220)
2013年12月26日 us_as 转让(新专利权人: SUNEDISON,INC. (F/K/A MEMC ELECTRONIC MATERIALS,
更多信息: RELEASE BY SECURED PARTY;ASSIGNOR:BANK OF AMERICA,N.A.;REEL/FRAME:031870/0031
生效日期: 20131220)
2013年12月26日 us_as 转让(新专利权人: SUNEDISON,INC. (F/K/A MEMC ELECTRONIC MATERIALS,
更多信息: RELEASE BY SECURED PARTY;ASSIGNOR:GOLDMAN SACHS BANK USA;REEL/FRAME:031870/0092
生效日期: 20131220)
2013年12月26日 us_as 转让(新专利权人: SUN EDISON LLC,CALIFORNIA
更多信息: RELEASE BY SECURED PARTY;ASSIGNOR:GOLDMAN SACHS BANK USA;REEL/FRAME:031870/0092
生效日期: 20131220)
2013年12月26日 us_as 转让(新专利权人: SOLAICX,OREGON
更多信息: RELEASE BY SECURED PARTY;ASSIGNOR:BANK OF AMERICA,N.A.;REEL/FRAME:031870/0031
生效日期: 20131220)
2013年12月26日 us_as 转让(新专利权人: SOLAICX,OREGON
更多信息: RELEASE BY SECURED PARTY;ASSIGNOR:GOLDMAN SACHS BANK USA;REEL/FRAME:031870/0092
生效日期: 20131220)
2013年12月26日 us_as 转让(新专利权人: SUN EDISON LLC,CALIFORNIA
更多信息: RELEASE BY SECURED PARTY;ASSIGNOR:BANK OF AMERICA,N.A.;REEL/FRAME:031870/0031
生效日期: 20131220)
2014年01月30日 us_as 转让(新专利权人: DEUTSCHE BANK AG NEW YORK BRANCH,NEW JERSEY
更多信息: SECURITY AGREEMENT;ASSIGNORS:SUNEDISON,INC.;SOLAICX;SUN EDISON,LLC;AND OTHERS;REEL/FRAME:032177/0359
生效日期: 20140115)
2014年03月03日 us_as 转让(新专利权人: SUN EDISON LLC,CALIFORNIA
更多信息: RELEASE BY SECURED PARTY;ASSIGNOR:DEUTSCHE BANK AG NEW YORK BRANCH;REEL/FRAME:032382/0724
生效日期: 20140228)
2014年03月03日 us_as 转让(新专利权人: SUNEDISON,INC.,MISSOURI
更多信息: RELEASE BY SECURED PARTY;ASSIGNOR:DEUTSCHE BANK AG NEW YORK BRANCH;REEL/FRAME:032382/0724
生效日期: 20140228)
2014年03月03日 us_as 转让(新专利权人: NVT,LLC,MARYLAND
更多信息: RELEASE BY SECURED PARTY;ASSIGNOR:DEUTSCHE BANK AG NEW YORK BRANCH;REEL/FRAME:032382/0724
生效日期: 20140228)
2014年03月03日 us_as 转让(新专利权人: SOLAICX,OREGON
更多信息: RELEASE BY SECURED PARTY;ASSIGNOR:DEUTSCHE BANK AG NEW YORK BRANCH;REEL/FRAME:032382/0724
生效日期: 20140228)
2014年03月17日 us_as 转让(新专利权人: SIBOND,L.L.C.,MISSOURI
更多信息: RELEASE OF SECURITY INTEREST TO REEL/FRAME: 012280/0161;ASSIGNOR:CITICORP USA,INC.;REEL/FRAME:032458/0794
生效日期: 20140313)
2014年03月17日 us_as 转让(新专利权人: MEMC PASADENA,INC.,TEXAS
更多信息: RELEASE OF SECURITY INTEREST TO REEL/FRAME: 012280/0161;ASSIGNOR:CITICORP USA,INC.;REEL/FRAME:032458/0794
生效日期: 20140313)
2014年03月17日 us_as 转让(新专利权人: MEMC ELECTRONIC MATERIALS,INC. (NOW KNOWN AS SUNE
更多信息: RELEASE OF SECURITY INTEREST TO REEL/FRAME: 012280/0161;ASSIGNOR:CITICORP USA,INC.;REEL/FRAME:032458/0794
生效日期: 20140313)
2014年03月17日 us_as 转让(新专利权人: PLASMASIL,L.L.C.,MISSOURI
更多信息: RELEASE OF SECURITY INTEREST TO REEL/FRAME: 012280/0161;ASSIGNOR:CITICORP USA,INC.;REEL/FRAME:032458/0794
生效日期: 20140313)
2014年03月17日 us_as 转让(新专利权人: MEMC SOUTHWEST INC.,MISSOURI
更多信息: RELEASE OF SECURITY INTEREST TO REEL/FRAME: 012280/0161;ASSIGNOR:CITICORP USA,INC.;REEL/FRAME:032458/0794
生效日期: 20140313)
2014年03月17日 us_as 转让(新专利权人: MEMC INTERNATIONAL,INC. (NOW KNOWN AS SUNEDISON I
更多信息: RELEASE OF SECURITY INTEREST TO REEL/FRAME: 012280/0161;ASSIGNOR:CITICORP USA,INC.;REEL/FRAME:032458/0794
生效日期: 20140313)
2014年05月27日 us_as 转让(新专利权人: SUNEDISON SEMICONDUCTOR LIMITED (UEN201334164H),S
更多信息: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:MEMC ELECTRONIC MATERIALS,INC.;REEL/FRAME:033023/0430
生效日期: 20140523)
2014年06月06日 us_as 转让(新专利权人: SUNEDISON SEMICONDUCTOR TECHNOLOGY PTE. LTD.,MISS
更多信息: NOTICE OF LICENSE AGREEMENT;ASSIGNOR:SUNEDISON SEMICONDUCTOR LIMITED;REEL/FRAME:033099/0001
生效日期: 20140527)

更新记录

2014年06月20日